We have examined the impact of charged impurity scattering on charge carrier transport in bilayer graphene (BLG) by deposition of potassium in ultrahigh vacuum at low temperature. Charged impurity scattering gives a conductivity which is supralinear in carrier density with a magnitude similar to single-layer graphene for the measured range of carrier densities of $2--4\ifmmode\times\else\texttimes\fi{}{10}^{12}\text{ }{\text{cm}}^{\ensuremath{-}2}$. Upon addition of charged impurities of concentration ${n}_{\text{imp}}$, the minimum conductivity ${\ensuremath{\sigma}}_{\text{min}}$ decreases proportional to ${n}_{\text{imp}}^{\ensuremath{-}1/2}$ while the electron and hole puddle carrier density increases proportional to ${n}_{\text{imp}}^{1/2}$. These results for the intentional deposition of potassium on BLG are consistent with theoretical predictions for charged impurity scattering assuming a gapless hyperbolic dispersion relation. However, our results also suggest that charged impurity scattering alone cannot explain the observed transport properties of pristine BLG on ${\text{SiO}}_{2}$ before potassium doping.