A Comprehensive Analysis of the Relaxation Phenomena in MOSFET's after Uniform Fowler-Nordheim Injection

The Post-Stress period in n-channel MOSFET's is examined from the viewpoint of Post-Stress variation of the bulk gate oxide degradation features (oxide charge ΔQoxPs and corresponding centroid xbPs). Besides, we demonstrate that the discharging mechanism is not affected by the stress-induced degradation level, neither by the process-induced Hydrogen (H) concentration throughout the MOS structure. Finally, some criticism is conducted on the methods used currently for analyzing the relaxation phase.