Direct observation of Sb dimers on InSb(100)-c(4 × 4)

[1]  W. H. Weinberg,et al.  Surface science lettersScanning tunneling microscopy of the filled and empty arsenic states on the GaAs(001)-(2 × 4) surface , 1992 .

[2]  R. F. Willis,et al.  On the atomic structure and electronic properties of decapped GaAs(001) (2×4) surfaces , 1992 .

[3]  W. H. Weinberg,et al.  Atom‐resolved imaging and spectroscopy on the GaAs(001) surface using tunneling microscopy , 1992 .

[4]  B. R. Williams,et al.  The development and coexistence of the c(4 × 4) and asymmetric × 3 phases during the adsorption of Sb on In-rich InSb(001) , 1991 .

[5]  T. Jones,et al.  Low energy ion beam damage of semiconductor surfaces: a detailed study of InSb(100) using electron energy loss spectroscopy , 1991 .

[6]  R. Celotta,et al.  A scanning tunneling microscopy study of clean and Cs‐covered InSb(110) , 1991 .

[7]  T. Jones,et al.  The effects of surface damage on surface plasmon excitations in doped InSb(100) , 1990 .

[8]  Chang,et al.  Theory of dielectric-function anisotropies of (001) GaAs (2 x 1) surfaces. , 1990, Physical review. B, Condensed matter.

[9]  Northrup,et al.  Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy. , 1990, Physical review. B, Condensed matter.

[10]  B. Joyce,et al.  A generalized model for the reconstruction of {001} surfaces of III–V compound semiconductors based on a RHEED study of InSb(001) , 1990 .

[11]  Miller,et al.  InSb(100) reconstructions probed with core-level photoemission. , 1989, Physical review. B, Condensed matter.

[12]  Robert G. Jones,et al.  Surface science lettersThe c(4 × 4) clean surface reconstruction of InSb(001) formed by UHV chemical etching using iodine and chlorine , 1989 .

[13]  J. Woodall,et al.  Structure of GaAs(001) ( 2 × 4 ) − c ( 2 × 8 ) Determined by Scanning Tunneling Microscopy , 1988 .

[14]  L. R. Dawson,et al.  Extended infrared response of InAsSb strained‐layer superlattices , 1988 .

[15]  J. Harbison,et al.  Molecular‐beam epitaxial growth mechanisms on the GaAs(100) surface , 1988 .

[16]  Stroscio,et al.  Atom-selective imaging of the GaAs(110) surface. , 1987, Physical review letters.

[17]  B. Joyce,et al.  GaAs(001)- c (44): A chemisorbed structure , 1983 .

[18]  C. Wood,et al.  Growth of Sb and InSb by molecular‐beam epitaxy , 1981 .

[19]  K. Oe,et al.  RHEED Study of InSb Films Grown by Molecular Beam Epitaxy , 1980 .

[20]  W. Harrison Theory of polar semiconductor surfaces , 1979 .

[21]  T. Jones,et al.  Imaging ion-bombarded III-V semiconductor surfaces: a scanning tunnelling microscopy study of InSb(100) , 1993 .

[22]  T. Jones,et al.  An STM study of the InSb(100)-c(8 × 2) surface , 1993 .

[23]  Robert G. Jones,et al.  The adsorption and desorption of iodine on InSb(001) , 1990 .