Online estimation of IGBT junction temperature (Tj) using gate-emitter voltage (Vge) at turn-off
暂无分享,去创建一个
E. Bianda | R. Bloch | G. Knapp | I. Nistor | V. Sundaramoorthy | A. Heinemann | E. Bianda | V. Sundaramoorthy | A. Heinemann | Richard Bloch | Iulian Nistor | G. Knapp
[1] Bruno Allard,et al. Transient temperature measurements and modeling of IGBT's under short circuit , 1998 .
[2] A.T. Bryant,et al. Exploration of Power Device Reliability Using Compact Device Models and Fast Electrothermal Simulation , 2006, IEEE Transactions on Industry Applications.
[3] H. Kuhn,et al. On-line junction temperature measurement of IGBTs based on temperature sensitive electrical parameters , 2009, 2009 13th European Conference on Power Electronics and Applications.
[4] Wolfgang Fichtner,et al. New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions , 2006, Microelectron. Reliab..
[5] Seung-Ki Sul,et al. On-line estimation of IGBT junction temperature using on-state voltage drop , 1998, Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242).
[6] C Mark Johnson,et al. Real-Time Compact Thermal Models for Health Management of Power Electronics , 2010, IEEE Transactions on Power Electronics.
[7] Wolfgang Fichtner,et al. Lifetime prediction and design of reliability tests for high-power devices in automotive applications , 2003 .
[8] Chris Bailey,et al. Real-time life consumption power modules prognosis using on-line rainflow algorithm in metro applications , 2010, 2010 IEEE Energy Conversion Congress and Exposition.
[9] L. Ran,et al. Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence , 2011, IEEE Transactions on Power Electronics.
[10] S. Sze. Semiconductor Devices: Physics and Technology , 1985 .
[11] Jerry L. Hudgins,et al. - Power Semiconductor Devices , 2018, The Electric Power Engineering Handbook - Five Volume Set.
[12] Wolfgang Fichtner,et al. A Novel Thermomechanics -Based Lifetime Prediction Model for Cycle Fatigue Failure Mechanisms in Power Semiconductors , 2002, Microelectron. Reliab..
[13] Wolfgang Fichtner,et al. A study of the threshold-voltage suitability as an application-related reliability indicator for planar-gate non-punch-through IGBTs , 2007, Microelectron. Reliab..
[14] Bruno Allard,et al. Choosing a thermal model for electrothermal simulation of power semiconductor devices , 1998 .