论文信息 - Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels - 字舞流文

Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels

V. Shalygin | E. Borisov | S. Suihkonen | O. Svensk | L. Shelukhin | V. Agekyan | A. Serov | L. Riuttanen | L. Vorobjev | G. A. Melentyev | H. Nykänen | N. G. Filisofov | L. A. Shelukhin | L. E. Vorobjev | L. Riuttanen | S. Suihkonen | O. Svensk