论文信息 - Electrical characterization of TiO 2 gate Oxides on strained-Si

Electrical characterization of TiO 2 gate Oxides on strained-Si

The electrical properties of low temperature (150 °C) plasma deposited TiO2 gate dielectrics on strained-Si are reported. The deposited films have been analyzed by X-ray photoelectron spectroscopy for chemical composition. The interfacial and electrical properties of the deposited films have been characterized using a metal-insulator-semiconductor (MIS) capacitor structure. The charge trapping properties in TiO2 gate dielectrics have been studied using constant current stressing. The leakage current has been found to be dominated by the Poole-Frenkel emission.

Goutam Kumar Dalapati | C. K. Maiti | Somenath Chatterjee | S. K. Samanta | S. K. Nandi

[1] N. Armstrong,et al. X-ray photoelectron spectroscopy of TiO2 and other titanate electrodes and various standard Titanium oxide materials: Surface compositional changes of the TiO2 electrode during photoelectrolysis , 1978 .

[2] C. K. Maiti,et al. Strained silicon heterostructures : materials and devices , 2001 .

[3] Bruce E. Deal,et al. Dependence of Interface State Density on Silicon Thermal Oxidation Process Variables , 1979 .

[4] Hafnium oxide gate dielectric for strained-Si1−xGex , 2003 .

[5] C. K. Maiti,et al. Hole mobility enhancement in strained-Si p-MOSFETs under high vertical field , 1997 .

[6] Bruce E. Deal. Standardized terminology for oxide charges associated with thermally oxidized silicon , 1980 .

[7] Stephen A. Campbell,et al. Titanium dioxide (TiO2)-based gate insulators , 1999, IBM J. Res. Dev..

[8] Temperature dependence of electrical properties of N2O/O2/N2O-grown oxides on strained SiGe , 2002 .

[9] Electrical characterization of low temperature deposited TiO2 films on strained-SiGe layers , 2003 .

[10] E. H. Nicollian,et al. Mos (Metal Oxide Semiconductor) Physics and Technology , 1982 .