论文信息 - Quasi-3D simulation approach for comparative evaluation of triggering ESD protection structures

Quasi-3D simulation approach for comparative evaluation of triggering ESD protection structures

Abstract A 2D simulation approach that takes into account the 3D effects of electro-thermal instability during electrostatic discharge (ESD) operation, is presented. The method is used to provide physical evaluation of a safe operation regime for BiCMOS ESD protection structures and circuits. The methodology is demonstrated through the application to Si–Ge NPN bipolar transistors, snapback NMOS and LVTSCR structures.

Ann Concannon | Vladislav A. Vashchenko | Marcel ter Beek | P. Hopper

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