论文信息 - Enhanced optical emission from GaN films grown on a silicon substrate

Enhanced optical emission from GaN films grown on a silicon substrate

GaN films have been grown on a silicon-(001) substrate with specially designed composite intermediate layers consisting of an ultrathin amorphous silicon layer and a GaN/AlxGa1−xN (x=0.2) multilayered buffer by metal-organic chemical vapor deposition and characterized by photoluminescence and x-ray diffraction spectroscopy. It was found that the GaN films grown on the composite intermediate layers gave comparable or slightly stronger optical emission than those grown on a sapphire substrate under an identical reactor configuration. Moreover, the full-width at half-maximum for the GaN band-edge-related emission is 40 meV at room temperature. This fact indicates that by using the proposed composite intermediate layers, the crystalline quality of GaN-based nitride grown on a silicon substrate can be significantly improved.

Zhe Chuan Feng | Soo Jin Chua | Peng Li | Xiong Zhang | Kok-Boon Chong

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