Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1 x)N layers as a function of InN content, layer thickness and growth parameters
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P. Vennégués | R. Martin | É. Frayssinet | H. Schenk | I. Watson | L. Bodiou | H. Kim-Chauveau | B. S. Diaby