Mask technology for EUV lithography
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Pei-yang Yan | Donald W. Sweeney | Sungho Jeong | Jeffrey Bokor | Edita Tejnil | Scott D. Hector | Patrick A. Kearney | Avijit K. Ray-Chaudhuri | Christopher C. Walton | William M. Tong | Gregory F. Cardinale | Alan R. Stivers | Scott C. Burkhart | Khanh B. Nguyen | Marco Wedowski | Craig E. Moore | Stephen P. Vernon | Frank J. Weber | M. Bujak | Charles J. Cerjan | Shon T. Prisbrey | Abbie L. Warrick | Karl C. Wilhelmsen
[1] Patrick A. Kearney,et al. Mask blanks for extreme ultraviolet lithography: Ion beam sputter deposition of low defect density Mo/Si multilayers , 1996 .
[2] Eric M. Gullikson,et al. Beamline for measurement and characterization of multilayer optics for EUV lithography , 1998, Advanced Lithography.
[3] A. C. Bonora. TECHNOLOGY TOPICS : MINIENVIRONMENTS AND THEIR PLACE IN THE FAB OF THE FUTURE , 1993 .
[4] Donald W. Sweeney,et al. EUV optical design for a 100-nm CD imaging system , 1998, Advanced Lithography.
[5] Jeffrey Bokor,et al. Minimum critical defects in extreme-ultraviolet lithography masks , 1997 .
[6] S. Mrowka,et al. EUV reticle pattern repair experiments using 10 KeV neon ions , 1995 .
[7] David L. Windt,et al. Reflective mask technologies and imaging results in soft x‐ray projection lithography , 1991 .