论文信息 - Analytical high-current model for the transit time of SiGe HBTs

Analytical high-current model for the transit time of SiGe HBTs

For accurate modeling the transit time of "true" SiGe HBTs up to high current densities, analytical equations have been derived and verified by both device simulations and measurements. They are part of a new compact model, which has just been implemented into a commercial circuit simulator.

Hans-Martin Rein | H. Rein | S. Wilms | S. Wilms

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