Sensitivity of proton implanted VCSELs to electrostatic discharge pulses

The sensitivity of vertical cavity surface-emitting lasers to electrostatic discharge (ESD) pulses has been investigated under human body model test conditions. Very similar degradation behavior has been found for vertical-cavity surface-emitting lasers (VCSELs) from two different manufacturers, both with proton-implantation for lateral current confinement. For all investigated devices we observed during forward bias stress that the optical degradation precedes the electrical degradation and the forward bias damage threshold pulse amplitudes were only slightly higher than the reverse bias values. At the initial stage of the VCSEL degradation, damage of the upper p-DBR mirror region has been observed without modification of the active layer. During the ESD tests we monitored the electrical and the optical parameters of the VCSELs and measured during forward bias stress additionally the optical emission transients. The optical transients during ESD pulsing enable a fast evaluation of the damage threshold and give also an indication of the time scale of the junction heating during ESD pulses.

[1]  B. Bauduin,et al.  Sensitivity to electrostatic discharges of “low-cost” 1.3 μm laser diodes: a comparative study , 1994 .

[2]  M. J. Robertson,et al.  Catastrophic and latent damage in GaAlAs lasers caused by electrical transients , 1984 .

[3]  K.M. Geib,et al.  Optoelectronic exclusive-OR using hybrid integration of phototransistors and vertical cavity surface emitting lasers , 1993, IEEE Photonics Technology Letters.

[4]  Mary K. Hibbs-Brenner,et al.  Vertical-cavity surface-emitting lasers: the applications , 1997, Photonics West.

[5]  R.A. Morgan,et al.  Reliability study of 850 nm VCSELs for data communications , 1996, Proceedings of International Reliability Physics Symposium.

[7]  P. Kiely,et al.  Effect of proton implantation on the degradation of GaAs/AlGaAs vertical cavity surface emitting lasers , 1997 .

[8]  B. A. Unger,et al.  Degradation in InGaAsP semiconductor lasers resulting from human body model ESD , 1993 .

[9]  W. S. Hobson,et al.  Small-signal characteristics of bottom-emitting intracavity contacted VCSEL's , 2000, IEEE Photonics Technology Letters.

[10]  Y. Twu,et al.  Semiconductor laser damage due to human-body-model electrostatic discharge , 1993 .

[11]  Jeff W. Scott,et al.  Analysis of VCSEL degradation modes , 1996, Photonics West.

[12]  U. Fiedler,et al.  Top surface-emitting vertical-cavity laser diodes for 10-Gb/s data transmission , 1996, IEEE Photonics Technology Letters.

[13]  N. Dutta,et al.  Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors , 1991 .

[14]  P. Petroff,et al.  Degradation mechanisms of vertical cavity surface emitting lasers , 1996, Proceedings of International Reliability Physics Symposium.

[15]  John P. R. David,et al.  Temperature effects in VCSELs , 1997, Photonics West.

[16]  Larry A. Coldren,et al.  Vertical-Cavity Surface-Emitting Lasers , 2001 .

[17]  R. G. Waters,et al.  Diode laser degradation mechanisms: A review , 1991 .