Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence

We have characterized high-electron mobility transistors and corresponding unprocessed material as a function of 1.8 MeV proton fluence. Electrical data shows degradation of the electrical contacts at low fluences (10/sup 11/-10/sup 14/ p/sup +//cm/sup 2/) and degradation of the channel properties for higher fluences. In conjunction with the electrical data, cathodoluminescence and secondary-ion mass spectrometry results suggest mechanisms for the higher fluence degradation.

[1]  N. B. Smirnov,et al.  Effects of proton implantation on electrical and recombination properties of n-GaN , 2000 .

[2]  T. Fisher,et al.  Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors , 2000 .

[3]  peixiong zhao,et al.  Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy , 2002 .

[4]  D. Schroder.  Semiconductor Material and Device Characterization , 1990 .

[5]  H.-L.A. Hung,et al.  Heavy ion total fluence effects in GaAs devices , 1990 .

[6]  Hongqi Xu,et al.  Transport properties of proton-irradiated GaAs/AlGaAs two-dimensional electron gas structures , 2000 .

[7]  M. Khan,et al.  Properties and ion implantation of AlxGa1−xN epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition , 1983 .

[8]  K. Nair,et al.  Effect of proton irradiation on the characteristics of GaAs Schottky barrier diodes , 2001 .

[9]  P. Vogl,et al.  Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors , 1998 .

[10]  R. Dimitrov,et al.  Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures , 2000 .

[11]  V. Kozlov,et al.  Modification of semiconductors with proton beams. A review , 2000 .

[12]  L. Brillson.  Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films , 2001 .

[13]  R. Vispute,et al.  Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n-type GaN , 2003 .

[14]  Umesh K. Mishra,et al.  Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors , 2003 .

[15]  Abhinav Kranti,et al.  Impact of strain relaxation of AlmGa1−mN layer on 2-DEG sheet charge density and current voltage characteristics of lattice mismatched AlmGa1−mN/GaN HEMTs , 2002 .

[16]  Patrick Fournier,et al.  Transport properties of proton-irradiated gallium nitride-based two-dimensional electron-gas system , 2002 .

[17]  S. Cai,et al.  Annealing behavior of a proton irradiated Al{sub x}Ga{sub 1{minus}x}N/GaN high electron mobility transistor grown by MBE , 2000 .

[18]  Amir Dabiran,et al.  dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors , 2001 .

[19]  Pierre Gibart,et al.  TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN , 1999 .

[20]  R. D. Schrimpf,et al.  Annealing Behavior of a Proton Irradiated Al Ga N/GaN High Electron Mobility Transistor Grown by MBE , 2000 .

[21]  R. Stratton,et al.  Field and thermionic-field emission in Schottky barriers , 1966 .

[22]  Richard Wilkins,et al.  Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors , 2003 .