论文信息 - An improved VBIC model for InP DHBTs

An improved VBIC model for InP DHBTs

An emprical model is established for InP/InGaAs DHBTs based on the VBIC model. The heterojunction barrier and current blocking effect are considered in the current expressions. And new empirical models for transit time and collector capacitance are proposed by considering the voltage and current dependence. The excellent fitting results show that the improved model has better accuracy than the conventional VBIC model.

[1] Ming Qi,et al. Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz , 2008 .

[2] P. Asbeck,et al. Large-signal HBT model with improved collector transit time formulation for GaAs and InP technologies , 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.

[3] Munkyo Seo,et al. THz MMICs based on InP HBT Technology , 2010, 2010 IEEE MTT-S International Microwave Symposium.

[4] H. C. Poon,et al. An integral charge control model of bipolar transistors , 1970, Bell Syst. Tech. J..

[5] William Liu. Handbook of III-V Heterojunction Bipolar Transistors , 1998 .

[6] MILTON FENG,et al. Device technologies for RF front-end circuits in next-generation wireless communications , 2004, Proceedings of the IEEE.

[7] J. Sitch,et al. A new large signal HBT model , 1994 .

[8] C. C. McAndrew,et al. VBIC95, the vertical bipolar inter-company model , 1996, IEEE J. Solid State Circuits.