Program method of non-volatile semiconductor memory device

PURPOSE: A program method of non-volatile semiconductor memory device is provided to prevent a program operation loss at a high power supply VCC and perform the program even at a row VCC without the help of a charge pump circuit, by adaptively performing a program corresponding to a level of power supply VCC. CONSTITUTION: A non-volatile semiconductor memory device includes a memory cell array(100) having a plurality of memory cells, an address buffer(20), a row decoder(30), a column decoder(130), a power supply detection part(150), a selection control part(160), a selection part(170), data input/output buffers, write drive parts W/Ds and a Y pass gate part(140). A level detection signal of VCC is generated by the comparison between an external VCC and a reference voltage. A selection control signal is generated according to the level detection signal. Selection signals are produced according to the selection control signal. A program is executed at the selected bitline by applying the selection signals to the write driving part.