论文信息 - Film bulk acoustic resonator at 4.4 GHz with ultra low temperature coefficient of resonant frequency

Film bulk acoustic resonator at 4.4 GHz with ultra low temperature coefficient of resonant frequency

This paper describes a temperature compensated film bulk acoustic resonator (FBAR) with temperature coefficient of resonant frequency (TCF) of -0.45 ppm//spl deg/C (between 85 and 110/spl deg/C) at 4.4 GHz. The FBAR is composed of Al/ZnO/Al/SiO/sub 2/ on a surface micromachined cantilever that is released by XeF/sub 2/ vapor etching. Residual stress and material temperature parameters have been incorporated into simulations for optimal design of a temperature compensated FBAR.

[1] H. Shimizu,et al. ZnO/SiO2-diaphragm composite resonator on a silicon wafer , 1981 .

[2] R. Ruby,et al. Micromachined thin film bulk acoustic resonators , 1994, Proceedings of IEEE 48th Annual Symposium on Frequency Control.

[3] T. M. Reeder,et al. Fundamental‐mode VHF/UHF minature acoustic resonators and filters on silicon , 1980 .

[4] R. A. Moore,et al. Film bulk acoustic wave resonator technology , 1990, IEEE Symposium on Ultrasonics.

[5] Kenneth Meade Lakin,et al. Acoustic bulk wave composite resonators , 1981 .