XOR based on an InP/InGaAs light amplifying optical switch (LAOS)

An optoelectronic circuit that implements the XOR logic function is presented. The light amplifying optical switch (LAOS) device is used as a building block to realize the minterms AB~ and BA~ required for the XOR function. These minterm circuits were monolithically integrated on an InP/InGaAs wafer grown by gas source molecular beam epitaxy and tested on a probe stand. The functionality of the minterm circuit is demonstrated. Load line analysis shows that transistors with unmatched gain characteristics can yield high ON/OFF contrast ratio when transistors are integrated with the lower gain transistor driving the parallel combination of a LAOS device and a higher gain transistor.<<ETX>>