Dynamic degradation in MOSFET's. II. Application in the circuit environment

For pt.I, see ibid., vol.38 no.8, pp.1852-1858, Aug. 1991. The physical effects discussed in Pt.I are classified with respect to real operation of devices in circuits from an engineer's viewpoint. Stress results from different kinds of logic stages are discussed and relations set up between static and dynamic lifetimes. It is shown that within certain limited error boundaries, the static approach is essentially valid as long as stress conditions are considered that are oriented to operation in digital logic. The transmission gate is investigated separately, because in this case specific phenomena caused by bidirectional stress must be considered. >

[1]  K. Nakamura,et al.  A simple method to evaluate device lifetime due to hot-carrier effect under dynamic stress , 1986, IEEE Electron Device Letters.

[2]  Kueing-Long Chen,et al.  The case of AC stress in the hot-carrier effect , 1986, IEEE Transactions on Electron Devices.

[3]  W. Weber,et al.  The effect of transients on hot carriers , 1989, IEEE Electron Device Letters.

[4]  G. Groeseneken,et al.  A reliable approach to charge-pumping measurements in MOS transistors , 1984, IEEE Transactions on Electron Devices.

[5]  Kazuo Yano,et al.  Hot-Carrier Effects under Pulsed Stress in CMOS Devices , 1987, 1987 Symposium on VLSI Technology. Digest of Technical Papers.

[6]  P. Heremans,et al.  Analysis of Hot Carrier Degradation in AC Stressed N-Channel MOS Transistors using the Charge Pumping Technique , 1988, ESSDERC '88: 18th European Solid State Device Research Conference.

[7]  Chenming Hu,et al.  Hot-electron-induced MOSFET degradation—Model, monitor, and improvement , 1985, IEEE Transactions on Electron Devices.

[8]  C. Werner,et al.  Degradation of n-MOS-Transistors after pulsed stress , 1984, IEEE Electron Device Letters.

[9]  C. Werner,et al.  Lifetimes and substrate currents in static and dynamic hot-carrier degradation , 1986, 1986 International Electron Devices Meeting.

[10]  D. Schmitt-Landsiedel,et al.  Influence of transistor degradation on CMOS performance and impact on life time criterion , 1988, Technical Digest., International Electron Devices Meeting.

[11]  E. Takeda,et al.  An empirical model for device degradation due to hot-carrier injection , 1983, IEEE Electron Device Letters.

[12]  Chenming Hu,et al.  Hot-carrier-induced MOSFET degradation under AC stress , 1987, IEEE Electron Device Letters.

[13]  D. Schmitt-Landsiedel,et al.  Hot-Carrier Degradation Effects Relevant in Real Operation of MOSFETs , 1990 .

[14]  Jeong Yeol Choi,et al.  Simulation of MOSFET lifetime under AC hot-electron stress , 1988 .

[15]  Eiji Takeda,et al.  Hot-Carrier Degradation Mechanism under AC Stress in MOSFET's , 1987, 1987 Symposium on VLSI Technology. Digest of Technical Papers.

[16]  Q. Wang,et al.  Hot-carrier degradation of CMOS-inverters , 1988, Technical Digest., International Electron Devices Meeting.

[17]  W. Weber,et al.  Sub micron P-MOSFETs under static and swap stress , 1987, 1987 Symposium on VLSI Technology.

[18]  Werner Weber,et al.  Dynamic stress experiments for understanding hot-carrier degradation phenomena , 1988 .

[19]  W. Weber.  IVB-5 Degradation behavior of dynamically stressed n-MOSFET's , 1985, IEEE Transactions on Electron Devices.

[20]  Guido Groeseneken,et al.  Analysis of mechanisms for the enhanced degradation during AC hot carrier stress of MOSFETs , 1988, Technical Digest., International Electron Devices Meeting.

[21]  K. Seki,et al.  Hot-carrier-induced degradation in p-MOSFETs under AC stress , 1988, IEEE Electron Device Letters.