Effects of high field injection on the hot carrier induced degradation of submicrometer pMOSFET's

The interaction between the hot carrier (HC) induced pMOSFET's degradation and the Fowler-Nordheim (FN) injection is investigated. It has been found that the FN injection is an efficient method to recover pMOSFET's from the HC induced degradation. This is achieved by removing some of the trapped electrons from the oxide and forming positive charges along the channel. The relative importance of these two factors is determined. The contribution of the interface states created by FN injection is negligible, since they are acceptor-like and not charged during pMOSFET's operation. The positive charges increase the lifetime of a recovered pMOSFET by requiring more electron trapping to compensate their effects on the threshold voltage. They also enhance the magnitude of punchthrough voltage. The effects of FN injection on the HC trapping kinetics are discussed. Under our experimental conditions, the new trapping sites created by FN injection are negligible, compared with the as-grown traps. When a recovered pMOSFET is stressed again, its degradation rate is not higher than that of a fresh pMOSFET. This allows FN injection to be used repeatedly and we can therefore control the pMOSFET's degradation within a given range. >

[1]  Chenming Hu,et al.  Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement , 1985, IEEE Journal of Solid-State Circuits.

[2]  Yukio Okazaki,et al.  New hot-carrier degradation mode and lifetime prediction method in quarter-micrometer PMOSFET , 1992 .

[3]  William Eccleston,et al.  Electron trap generation in thermally grown SiO2 under Fowler-Nordheim stress , 1992 .

[4]  D. Arnold,et al.  Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon , 1993 .

[5]  Piero Olivo,et al.  Electron trapping/detrapping within thin SiO2 films in the high field tunneling regime , 1983 .

[6]  B. S. Doyle,et al.  A lifetime prediction method for hot-carrier degradation in surface-channel p-MOS devices , 1990 .

[7]  W. Hansch,et al.  The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET's , 1987, IEEE Transactions on Electron Devices.

[8]  Q. Wang,et al.  Explanation and model for the logarithmic time dependence of p-MOSFET degradation , 1991, IEEE Electron Device Letters.

[9]  Chenming Calvin Hu,et al.  Performance and reliability design issues for deep-submicrometer MOSFETs , 1991 .

[10]  M. Vanzi,et al.  Hot electrons in MOS transistors: Lateral distribution of the trapped oxide charge , 1982, IEEE Electron Device Letters.

[11]  Chenming Hu,et al.  Recovery of threshold voltage after hot-carrier stressing , 1988 .

[12]  G. Groeseneken,et al.  Degradation of tunnel-oxide floating-gate EEPROM devices and the correlation with high field-current-induced degradation of thin gate oxides , 1989 .

[13]  M. Fischetti,et al.  The effect of gate metal and SiO2 thickness on the generation of donor states at the Si‐SiO2 interface , 1985 .

[14]  Ping-Keung Ko,et al.  Hot-carrier current modeling and device degradation in surface-channel p-MOSFETs , 1990 .

[15]  G. J. Dunn,et al.  Channel hot-carrier stressing of reoxidized nitrided silicon dioxide , 1990 .

[16]  William Eccleston,et al.  A quantitative investigation of electron detrapping in SiO2 under Fowler–Nordheim stress , 1992 .

[17]  A. Kamgar,et al.  Miniaturization of Si MOSFET's at 77 K , 1982, IEEE Transactions on Electron Devices.

[18]  G. Groeseneken,et al.  Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs , 1988 .

[19]  C. Werner,et al.  Hot-electron and hole-emission effects in short n-channel MOSFET's , 1985, IEEE Transactions on Electron Devices.

[20]  Hiroshi Iwai,et al.  Analysis of hot-carrier-induced degradation mode on pMOSFET's , 1990 .

[21]  Roles of electron trapping and interface state generation on gate-induced drain leakage current in p-MOSFETs , 1991, IEEE Electron Device Letters.

[22]  Fischetti.  Model for the generation of positive charge at the Si-SiO2 interface based on hot-hole injection from the anode. , 1985, Physical review. B, Condensed matter.

[23]  A. Hamada,et al.  Time dependence of p-MOSFET hot-carrier degradation measured and interpreted consistently over ten orders of magnitude , 1993 .

[24]  Chenming Hu,et al.  Substrate hole current and oxide breakdown , 1986 .

[25]  James Stasiak,et al.  Trap creation in silicon dioxide produced by hot electrons , 1989 .

[26]  B. Doyle,et al.  NBTI-enhanced hot carrier damage in p-channel MOSFETs , 1991, International Electron Devices Meeting 1991 [Technical Digest].

[27]  J. M. Aitken,et al.  Location of positive charges in SiO2 films on Si generated by vuv photons, x rays, and high‐field stressing , 1977 .

[28]  W. Weber,et al.  Annealing of fixed oxide charge induced by hot-carrier stressing , 1990, ESSDERC '90: 20th European Solid State Device Research Conference.

[29]  M. Koyanagi,et al.  Hot-electron-induced punchthrough (HEIP) effect in submicrometer PMOSFET's , 1987, IEEE Transactions on Electron Devices.

[30]  M. Heyns,et al.  The Role of Hole Traps in the Degradation of Thermally Grown SiO2 Layers , 1988 .

[31]  R.L. Johnston,et al.  Experimental derivation of the source and drain resistance of MOS transistors , 1980, IEEE Transactions on Electron Devices.