A Semi-Classical Model for Simulating Inversion Carrier Transport in Si MOS Devices

A semiclassical Monte Carlo model is given for simulating electron transport in Si-MOS inversion layers. The main feature of the model is that it takes into account the existence of a nonstoichiometric SiOx layer between bulk Si and the SiO2 matrix. The band-gap in this layer is supposed to evolve linearly perpendicular to the interface from that of Si to that of SiO2. However, the band structure and electron dynamics in the SiOx layer are supposed to be dominantly that of Si. Results for drift velocity in the hot carrier regime are compared with the most recent experimental data. The spatial evolution of the carrier concentration near the interface is also investigated. It is found that the carriers may penetrate into the SiOx layer. Ce travail presente un modele de Monte-Carlo semiclassique pour simuler le transport electronique dans la couche d'inversion d'une structure MOS. L'originalite de ce modele reside dans la prise en compte de l'existence de la couche nonstoechiometrique SiOx entre le silicium en volume et la matrice de SiO2. Dans une premiere etape nous supposons que l'evolution du bas de la bande de conduction dans la zone de transition SiOx est lineaire, et que la structure de bande et la dynamique electronique dans la zone de SiOx sont semblables a celles dans le silicium en volume. Les resultats concernsnt la vitesse de derive des electrons chauds sont comparees avec les donnees experimentales los plus recentes. Nous etudions aussi l'evolution spaciale des porteurs au voisinage de l'interface Si-SiO2 : il apparait qu'une partie des porteurs de la couche d'inversion peut penetrer dam la zone de transition SiOx.

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