Irreversibility effects in piezoelectric wafer active sensors after exposure to high temperature

This paper presents an experimental and analytical study of irreversible change in piezoelectric wafer active sensor (PWAS) electromechanical (E/M) impedance and admittance signature under high temperature exposure. After elevated to high temperatures, change in the material properties of PWAS can be quantified through irreversible changes in its E/M impedance and admittance signature. For the experimental study, circular PWAS transducers were exposed to temperatures between 50 °C and 250 °C at 50 °C intervals. E/M impedance and admittance data were obtained before and after each heating cycle. Irreversible temperature sensitivity of PWAS resonance and anti-resonance frequency was estimated as 0.0246 kHz °C−1 and 0.0327 kHz °C−1 respectively. PWAS transducer material properties relevant to impedance or admittance signature such as dielectric constant, dielectric loss factor, mechanical loss factor, and in plane piezoelectric constant were determined experimentally at room temperature before and after the elevated temperature tests. The in-plane piezoelectric coefficient was measured by using optical-fiber strain transducer system. It was found that the dielectric constant and in-plane piezoelectric coefficient increased linearly with temperature. Dielectric loss also increases with temperature but remains within 0.2% of initial room temperature value. Change in dielectric properties and piezoelectric constant may be explained by depinning of domains or by domain wall motion. The piezoelectric material degradation was investigated microstructurally and crystallographically by using scanning electron microscope and x-ray diffraction method respectively. There were no noticeable changes in microstructure, crystal structure, unit cell dimension, or symmetry. The degraded PWAS material properties were determined by matching impedance and admittance spectrums from experimental results with a closed form circular PWAS analytical model. Analytical results showed that impedance and admittance strongly depend on elastic coefficient, dielectric constant, mechanical loss factor, dielectric loss tangent and in plane piezoelectric constant. These properties were found to be susceptible to change after high temperature exposure.