Photoconductive and Non-Equilibrium Devices in HgCdTe and Related Alloys

The fundamental properties of HgCdTe (MCT) of high optical absorption coefficient, high electron mobility and low carrier thermal generation rate, together with the alloy’s capability for lattice-matched heterojunctions and band gap engineering, make it the almost ideal material for infrared detectors over a wide wavelength range. Despite its difficult physical properties, which have made the development of crystal growth and device fabrication techniques challenging, it is now the most widely used infrared detector material, in many different types of devices.

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