Surface roughness and device layer thickness for ultra-thin SOI

Results for epi-based final surface finishing are reported for ultra-thin (<50 nm device layers) SOI wafers. Near and sub-Angstrom surface roughness over lateral scales up to 10 /spl mu/m and device layer thickness uniformity range (max-min) of 10% have been achieved for 200 and 300 mm SOI wafers.