Temperature-cycling acceleration factors for aluminium metallization failure in VLSI applications

Low-cycle fatigue data for four common aluminium failure mechanisms in VLSI applications are presented; fractured intermetallic bond failure, chip-out bond failure, shear-stress-induced metal movement and passivation cracking and tensile-stress-induced metal notching and voiding (stress migration). Except for the tensile-stress-induced notching and voiding, uniform acceleration exists when commonly used accelerated temperature cycling ranges are compared: 0 degrees C/125 degrees C, -40 degrees C/85 degrees C, -40 degrees C/140 degrees C, and -65 degrees C/150 degrees C. Tensile-stress induced metal notching and voiding is not uniformly accelerated by temperature cycling; it is accelerated more effectively by simple elevated temperature storage. A temperature-cycling acceleration factor model, based on the Coffin-Manson law, is presented. The problem of using only the temperature cycling range when calculating the acceleration factor is highlighted.<<ETX>>

[1]  F. Brotzen,et al.  Mechanical behavior of aluminum and Al-Cu(2%) thin films☆ , 1988 .

[2]  G. Hill,et al.  Silicon Inclusions in Aluminum Interconnects , 1984, 22nd International Reliability Physics Symposium.

[3]  R. Thomas,et al.  Stress-Induced Deformation of Aluminum Metallization in Plastic Molded Semiconductor Devices , 1985 .

[4]  J. A. Cunningham.  Expanded contacts and interconnexions to monolithic silicon integrated circuits , 1965 .

[5]  Tim Koch,et al.  A Bond Failure Mechanism , 1986, 24th International Reliability Physics Symposium.

[6]  Walter H. Schroen,et al.  Stress Related Failures Causing Open Metallization , 1987, IEEE International Reliability Physics Symposium.

[7]  R.V. Taylor,et al.  Stress Induced Voids in Aluminum Interconnects During IC Processing , 1985, 23rd International Reliability Physics Symposium.

[8]  Walter H. Schroen,et al.  Bond pad structure reliability , 1988 .

[9]  R. C. Blish,et al.  Thin-Film Cracking and Wire Ball Shear in Plastic Dips Due to Temperature Cycle and Thermal Shock , 1987, 25th International Reliability Physics Symposium.

[10]  H. Katō.  Volume Change due to Intermetallic Compound Formation at the Al-Au Bond in Semiconductor Devices , 1986 .

[11]  Elliott Philofsky,et al.  Intermetallic formation in gold-aluminum systems , 1970 .

[12]  T. Umemoto,et al.  The Effect of Cu Addition to Al-Si Interconnects on Stress Induced Open-Circuit Failures , 1987, 25th International Reliability Physics Symposium.