Advances in group III-nitride-based deep UV light-emitting diode technology

The field of AlGaInN ultraviolet UV light-emitting diodes (LEDs) is reviewed, with a summary of the state-of-the-art in device performance and enumeration of applications. Performance-limiting factors for high-efficiency UV LEDs are identified and recent advances in the development of deep UV emitters are presented.

[1]  Takashi Mukai,et al.  Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells , 2010 .

[2]  Jing Li,et al.  Mg acceptor level in AlN probed by deep ultraviolet photoluminescence , 2003 .

[3]  Leo J. Schowalter,et al.  Pseudomorphic growth of thick n-type AlxGa1−xN layers on low-defect-density bulk AlN substrates for UV LED applications , 2009 .

[4]  C. Walle,et al.  Indium versus hydrogen-terminated GaN(0001) surfaces: Surfactant effect of indium in a chemical vapor deposition environment , 2004 .

[5]  Michael Heuken,et al.  Effect of the AIN nucleation layer growth on AlN material quality , 2008 .

[6]  Norihiko Kamata,et al.  Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer , 2010 .

[7]  S. Denbaars,et al.  Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition , 2001 .

[8]  Zhihong Yang,et al.  Ultraviolet semiconductor laser diodes on bulk AlN , 2007 .

[9]  Michael Heuken,et al.  High-temperature growth of AlN in a production scale 11 × 2' MOVPE reactor , 2008 .

[10]  M. Shur,et al.  Near-band-edge photoluminescence of wurtzite-type AlN , 2002 .

[11]  David B. Slater,et al.  High efficiency GaN-based LEDs and lasers on SiC , 2004 .

[12]  M. Asif Khan,et al.  AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire , 2002 .

[13]  Zhihong Yang,et al.  Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire Templates , 2006 .

[14]  Makoto Miyoshi,et al.  AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Grown on Epitaxial AlN/Sapphire Templates , 2008 .

[15]  Mika Sillanpää,et al.  Ultraviolet light-emitting diodes in water disinfection , 2009, Environmental science and pollution research international.

[16]  M. Weyers,et al.  Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes , 2008 .

[17]  Y. Taniyasu,et al.  An aluminium nitride light-emitting diode with a wavelength of 210 nanometres , 2006, Nature.

[18]  Michael S. Shur,et al.  AlGaN Deep-Ultraviolet Light-Emitting Diodes , 2005 .

[19]  M. Kneissl,et al.  Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector , 2010 .

[20]  Mim Lal Nakarmi,et al.  Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys , 2005 .

[21]  Michael R. Krames,et al.  Vertical injection thin-film AlGaN∕AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes , 2006 .

[22]  Hong Wang,et al.  Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management , 2002 .

[23]  Sergey Yu. Karpov,et al.  Dislocation effect on light emission efficiency in gallium nitride , 2002 .

[24]  M Jekel,et al.  Application of GaN-based ultraviolet-C light emitting diodes--UV LEDs--for water disinfection. , 2011, Water research.

[25]  Motoaki Iwaya,et al.  High‐performance UV emitter grown on high‐crystalline‐quality AlGaN underlying layer , 2009 .

[26]  Norihiko Kamata,et al.  222–282 nm AlGaN and InAlGaN‐based deep‐UV LEDs fabricated on high‐quality AlN on sapphire , 2009 .

[27]  M. Asif Khan,et al.  High-efficiency 269 nm emission deep ultraviolet light-emitting diodes , 2004 .

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[29]  Naoki Kobayashi,et al.  GaN-free transparent ultraviolet light-emitting diodes , 2003 .

[30]  Asif Khan,et al.  Ultraviolet light-emitting diodes based on group three nitrides , 2008 .

[31]  Grigory Simin,et al.  Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm , 2002 .

[32]  U. Zeimer,et al.  Growth of AlGaN and AlN on patterned AlN/sapphire templates , 2011 .

[33]  Tomoaki Ohashi,et al.  231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire , 2007 .