Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications
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Lin Cheng | Anant K. Agarwal | Aivars J. Lelis | John W. Palmour | Robert Callanan | Charles Scozzie | Craig Capell | Michael J. O'Loughlin | S. Dhar | A. Agarwal | S. Ryu | R. Callanan | J. Palmour | M. O'loughlin | A. Burk | C. Scozzie | A. Lelis | Lin Cheng | C. Capell | C. Jonas | Sarit Dhar | Albert A. Burk | Sei Hyung Ryu | Charlotte Jonas
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[2] Performance of 60 A, 1200 V 4H-SiC DMOSFETs , 2009 .