Fully Depleted SOI Pixel Photo Detectors with Backgate Surface Potential Pinning

A novel SOI (Silicon-On-Insulator) pixel photo detector with full depletion and backgate surface potential pinning is proposed in this paper. The detector greatly increases charge-to-voltage conversion gain while stabilizing the operation of SOI circuits. Low noise and wide dynamic range operations are attained. A double doping technique increasing potential barrier to holes at the surface region is effective for a stable operation to the variation of back bias voltage. The structure of the pixel detector and simulation results of potential distributions are described.