Low-frequency noise measurements in silicon power MOSFETs as a tool to experimentally investigate the defectiveness of the gate oxide

July 18th and 19th 2013 Barcelona 47 In this work, we implemented a low-noise laboratory set-up and related numerical processing techniques that allow to perform accurate LF noise measurements in power MOSFETs. The experimental results confirmed the suitability of this measurement technique to analyse the gate oxide quality in silicon trench power MOSFETs. Moreover, from a general standpoint, this kind of empirical investigation allows to select the most suitable physical model for the compact description of 1/f-like fluctuations of the drain current. In particular in this paper, by measuring the LF noise spectra as a function of the gate voltage bias level, we proved that the so-called McWorther number fluctuation model is appropriate for the device technology considered. Thus, this model was adopted, in association with the experimental data, in order to estimate the trap density in the gate oxide. Schematic of the LF noise measurement system for power MOSFETs. Low-Frequency Noise Measurements in Silicon Power MOSFETs as a Tool to Experimentally Investigate the Defectiveness of the Gate Oxide Paolo Magnone114, Pier Andrea Traverso115, Giacomo Barletta116, Claudio Fiegna114,115 14AS060

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