Low-frequency noise measurements in silicon power MOSFETs as a tool to experimentally investigate the defectiveness of the gate oxide

July 18th and 19th 2013 Barcelona 47 In this work, we implemented a low-noise laboratory set-up and related numerical processing techniques that allow to perform accurate LF noise measurements in power MOSFETs. The experimental results confirmed the suitability of this measurement technique to analyse the gate oxide quality in silicon trench power MOSFETs. Moreover, from a general standpoint, this kind of empirical investigation allows to select the most suitable physical model for the compact description of 1/f-like fluctuations of the drain current. In particular in this paper, by measuring the LF noise spectra as a function of the gate voltage bias level, we proved that the so-called McWorther number fluctuation model is appropriate for the device technology considered. Thus, this model was adopted, in association with the experimental data, in order to estimate the trap density in the gate oxide. Schematic of the LF noise measurement system for power MOSFETs. Low-Frequency Noise Measurements in Silicon Power MOSFETs as a Tool to Experimentally Investigate the Defectiveness of the Gate Oxide Paolo Magnone114, Pier Andrea Traverso115, Giacomo Barletta116, Claudio Fiegna114,115 14AS060

[1]  L.K.J. Vandamme,et al.  What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs? , 2008, IEEE Transactions on Electron Devices.

[2]  V. Rao,et al.  $1/f$ Noise in Drain and Gate Current of MOSFETs With High-$k$ Gate Stacks , 2009 .

[3]  L. Pantisano,et al.  Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1∕f noise , 2007 .

[4]  E. Simoen,et al.  A model for MOS gate stack quality evaluation based on the gate current 1/f noise , 2008, 2008 9th International Conference on Ultimate Integration of Silicon.

[5]  Comparison of 1/f noise in irradiated power MOSFETs measured in the linear and saturation regions , 1992 .

[6]  C. Hu,et al.  A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors , 1990 .

[8]  Modeling the gate current 1/f noise and its application to advanced CMOS devices , 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

[9]  peixiong zhao,et al.  Investigation of possible sources of 1/f noise in irradiated n-channel power MOSFETs , 1994 .

[10]  Gijs Bosman,et al.  Comprehensive noise performance of ultrathin oxide MOSFETs at low frequencies , 2004 .

[11]  Giuseppe Iannaccone,et al.  Analytical model for the 1∕f noise in the tunneling current through metal-oxide-semiconductor structures , 2009 .

[13]  A. Mercha,et al.  Low-frequency noise behavior of SiO/sub 2/--HfO/sub 2/ dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness , 2004, IEEE Transactions on Electron Devices.

[14]  F. Hooge.  1/f noise sources , 1994 .

[15]  G. Ghibaudo,et al.  Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films , 1996, IEEE Electron Device Letters.

[16]  Gérard Ghibaudo,et al.  Electrical noise and RTS fluctuations in advanced CMOS devices , 2002, Microelectron. Reliab..

[17]  Cor Claeys,et al.  On the flicker noise in submicron silicon MOSFETs , 1999 .