Performance evaluation of an emitter switched thyristor for resonant converter applications

This paper reports on the static and dynamic switching characteristics of an emitter switched thyristor (EST) for resonant power converter applications. Two-dimensional (2-D) mixed device and circuit simulations were used to study the carrier switching dynamics. It is shown that during turn-on, the EST has better performance than an IGBT with significantly enhanced drift region conductivity modulation. Thyristor-like on-state operation of EST leads to a slight degradation of the turn-off performance as compared to the IGBT.<<ETX>>