论文信息 - (S)TEM Analysis of the Strain and Morphology of InAs Quantum Dots using GaAs(Sb)(N) Capping Layers for Solar Cell Applications - 字舞流文

(S)TEM Analysis of the Strain and Morphology of InAs Quantum Dots using GaAs(Sb)(N) Capping Layers for Solar Cell Applications

D. F. Reyes | A. D. Utrilla | J. M. Ulloa | T. Ben | D. González | J. Saborido | M. Guerrero-Lebrero | E. Guerrero | G. Bárcena-Gonzálz | D. Reyes | A. Utrilla