Links between oxide, interface, and border traps in high‐temperature annealed Si/SiO2 systems

Evidence is provided to show that enhanced hole‐, interface‐, and border‐trap generation in irradiated high‐temperature annealed Si/SiO2/Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies. We find that the calculated oxygen vacancy due to high‐temperature anneals from 800 to 950 °C in metal‐oxide‐semiconductor capacitors closely matches the radiation‐induced oxide‐trapped charge. This strongly suggests that oxygen vacancies (or vacancy‐related complexes) are the dominant hole trapping sites in this particular case. Along with the increase in radiation‐induced oxide‐trap charge, we observe a concomitant increase in the interface‐ and border‐trap densities. This suggests that in devices that receive high‐temperature anneals, all these phenomena are linked to the existence of oxygen vacancies either directly, or indirectly, perhaps via hole trapping at these vacancies.

[1]  J. R. Patel,et al.  Diffusivity of oxygen in silicon at the donor formation temperature , 1983 .

[2]  D. Fleetwood,et al.  Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices , 1993 .

[3]  Patrick M. Lenahan,et al.  Hole traps and trivalent silicon centers in metal/oxide/silicon devices , 1984 .

[4]  Scofield,et al.  Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors. , 1990, Physical review letters.

[5]  Daniel M. Fleetwood,et al.  Effect of post-oxidation anneal temperature on radiation-induced charge trapping in metal-oxide-semiconductor devices , 1988 .

[6]  Douglas A. Buchanan,et al.  Interface and bulk trap generation in metal‐oxide‐semiconductor capacitors , 1990 .

[7]  P. S. Winokur,et al.  Correlating the Radiation Response of MOS Capacitors and Transistors , 1984, IEEE Transactions on Nuclear Science.

[8]  R. Devine.  Radiation Induced Structural Changes in Amorphous SiO2: I. Point Defects , 1992 .

[9]  Daniel M. Fleetwood,et al.  Long‐term annealing study of midgap interface‐trap charge neutrality , 1992 .

[10]  W. Carlos.  E′ Centers in Silicon Dioxide Films: A Comparison with Bulk Centers and their Role in “Rebound” Effects* , 1987 .

[11]  Observation of slow states in conductance measurements on silicon metal-oxide-semiconductor capacitors , 1989 .

[12]  Daniel M. Fleetwood,et al.  The role of border traps in MOS high-temperature postirradiation annealing response , 1993 .

[13]  Daniel M. Fleetwood,et al.  Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices , 1990 .

[14]  S. Lai,et al.  Interface trap generation in silicon dioxide when electrons are captured by trapped holes , 1983 .

[15]  D. Fleetwood,et al.  Point defect generation during high temperature annealing of the Si‐SiO2 interface , 1993 .

[16]  D. Fleetwood,et al.  Excess‐Si related defect centers in buried SiO2 thin films , 1993 .

[17]  D. Fleetwood.  'Border traps' in MOS devices , 1992 .

[18]  D. Fleetwood,et al.  New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors) , 1992 .

[19]  A. Anedda,et al.  Fundamental optical constant of the layered semiconductor ZnIn2S4 , 1979 .

[20]  J. Mikkelsen.  Self‐diffusivity of network oxygen in vitreous SiO2 , 1984 .