论文信息 - A new method for series resistance extraction in poly-Si thin-film transistors

A new method for series resistance extraction in poly-Si thin-film transistors

A new method for extraction of series resistance is proposed for poly-Si thin-film transistors. In this method, the extraction procedure is insensitive to the variation in effective channel length and device mobility, since both quantities are included in a single extracted parameter. The method has been successfully applied to a group of poly-Si TFTs with mask channel length from 2 to 30µm. Compared with the estimated series resistance, the extracted result is reasonable.

[1] Mingxiang Wang,et al. An Effective Channel Mobility-Based Analytical On-Current Model for Polycrystalline Silicon Thin-Film Transistors , 2007, IEEE Transactions on Electron Devices.

[2] Gerard Ghibaudo,et al. A New Technique to Extract the Source/Drain Series Resistance of MOSFETs , 2009, IEEE Electron Device Letters.

[3] Michael S. Shur,et al. Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFTs , 1996 .

[4] R. F. Motta,et al. A new method to determine MOSFET channel length , 1980, IEEE Electron Device Letters.

[5] A. F. Tasch,et al. A comprehensive model for inversion layer hole mobility for simulation of submicrometer MOSFET's , 1991 .

[6] Ping-Keung Ko,et al. Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's , 1986 .

[7] J.D. Meindl,et al. Modeling and optimization of monolithic polycrystalline silicon resistors , 1981, IEEE Transactions on Electron Devices.

[8] D. M. Kim,et al. Photonic high-frequency capacitance-voltage characterization of interface states in metal-oxide-semiconductor capacitors , 2002 .