论文信息 - A silicon ultraviolet detector

A silicon ultraviolet detector

Abstract A selective photodetector for ultraviolet light has been developed. The detector consists of an integrated combination of a selective photodiode and an interference filter. The doping profile of the diode was devised in such a way that a sharp potential barrier for holes appears at a depth of about 100 nm. The photosensitive region of the diode is located between the surface and this barrier. The diode surface was covered by a Fabry-Perot-type Al-SiO 2 -Al interference filter. The detector was fabricated using the methods of silicon IC technology. The ratio of the photoresponsivities at 300 nm and 1 μm was about 10 4 .

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