Stable structures of a Si(0 0 1) vicinal surface after alternating current heating up to about 1140 °C

[1]  M. Ichikawa,et al.  Formation of double-monolayer-height islands on a Si(001) surface by alternating current heating in molecular beam epitaxy , 1999 .

[2]  A. Pimpinelli,et al.  Steady-state motion of silicon islands driven by a DC current , 1999 .

[3]  Heiji Watanabe,et al.  Atomic-scale structure of SiO 2 /Si interface formed by furnace oxidation , 1998 .

[4]  H. Minoda,et al.  Competing effects of current and strain on step structures on Si(001)2 × 1 studied by REM , 1997 .

[5]  Heiji Watanabe,et al.  ANISOTROPIC KINETICS OF VACANCY DIFFUSION AND ANNIHILATION ON SI(001) SURFACES STUDIED BY SCANNING REFLECTION ELECTRON MICROSCOPY , 1997 .

[6]  C. Roland,et al.  Control of Si(100) Sublimation with Dopants , 1997 .

[7]  M. Ichikawa,et al.  Observation of Si(001) surface topography at temperatures below 1140t°C using a reflection electron microscope , 1997 .

[8]  Ichikawa,et al.  Anisotropic diffusion between the step-up and the step-down directions on a Si(001) surface. , 1996, Physical review. B, Condensed matter.

[9]  Cho,et al.  Vicinal Si(100) surfaces under external strain. , 1996, Physical review. B, Condensed matter.

[10]  Pearson,et al.  Si(001) Step Dynamics. , 1995, Physical review letters.

[11]  M. Ichikawa,et al.  Direct Observation of Electron Charge of Si Atoms on a Si(001) Surface , 1995 .

[12]  Williams,et al.  Step capillary waves and equilibrium island shapes on Si(001). , 1994, Physical review letters.

[13]  D. Wolf,et al.  Kinetic surface roughening of Si(001) during sublimation , 1993 .

[14]  Zandvliet,et al.  Morphology of monatomic step edges on vicinal Si(001). , 1993, Physical review. B, Condensed matter.

[15]  Y. Homma,et al.  Atomic configuration dependent secondary electron emission from reconstructed silicon surfaces , 1993 .

[16]  H. Iwatsuki Scanning tunneling microscopy of clean silicon surfaces at elevated temperatures , 1993 .

[17]  Reuter,et al.  Step morphologies on small-miscut Si(001) surfaces. , 1993, Physical review. B, Condensed matter.

[18]  A. Natori,et al.  Step Structure Transformation of Si(001) Surface Induced by Current , 1992 .

[19]  Tersoff,et al.  Sinuous step instability on the Si(001) surface. , 1992, Physical review letters.

[20]  Reuter,et al.  Wavy steps on Si(001). , 1992, Physical review letters.

[21]  Tersoff,et al.  Phase diagram of vicinal Si(001) surfaces. , 1991, Physical review letters.

[22]  M. Lagally,et al.  Anisotropy in surface migration of Si and Ge on Si(001) , 1991 .

[23]  E. Bauer,et al.  Low-energy electron microscopy of semiconductor surfaces , 1991 .

[24]  M. Lagally,et al.  Surface step configurations under strain: kinetics and step-step interactions , 1991 .

[25]  S. Stoyanov Electromigration Induced Step Bunching on Si Surfaces – How Does it Depend on the Temperature and Heating Current Direction? , 1991 .

[26]  Webb,et al.  Direct determination of step and kink energies on vicinal Si(001). , 1990, Physical review letters.

[27]  M. Ichikawa,et al.  Observation of electromigration effect upon Si-MBE growth on Si(001) surface. , 1990 .

[28]  Webb,et al.  Si(100) surface under an externally applied stress. , 1988, Physical review letters.

[29]  D. Vanderbilt,et al.  Spontaneous formation of stress domains on crystal surfaces. , 1988, Physical review letters.

[30]  Chadi Dj,et al.  Stabilities of single-layer and bilayer steps on Si(001) surfaces. , 1987 .

[31]  Rudolf M. Tromp,et al.  Scanning tunneling microscopy of Si(001). , 1986, Physical review. B, Condensed matter.