1000‐V, 300‐ps pulse‐generation circuit using silicon avalanche devices

A Marx configured avalanche transistor string and a pulse rise‐time peaking diode are used to generate pulses of >1000 V into a 50‐Ω load with rise times of less than 300 ps. The trigger delay of this circuit is about 7–10 ns, with jitter <100 ps. This circuit has been used to generate pulses at a repetition rate up to 5 kHz.