Growth of β‐Ga2O3 on Al2O3 and GaAs using metal‐organic vapor‐phase epitaxy

Epitaxial layers of monoclinic β-Ga2O3 were successfully grown on (0001) sapphire and (11)As GaAs substrates using metal-organic vapor-phase epitaxy (MOVPE). Triethylgallium (TEGa) and N2O were used as precursors for gallium and oxygen, respectively. Growth conditions could be determined, where β-Ga2O3 grows epitaxially on c -plane sapphire and (11)As GaAs substrates. X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements identify a epitaxial relationship with (01) β-Ga2O3 || (0001) sapphire and (01) β-Ga2O3 || (11)As GaAs. The observed sixfold rotational in-plane symmetry results from differently oriented rotational domains of monoclinic β-Ga2O3 with twofold symmetry. Thin films deposited on substrates of other orientation show the formation of the low-temperature modification α-Ga2O3. Optical transmission spectra measured in the spectral range from 200 nm to 2000 nm show a well-distinct absorption edge at about 5 eV for layers grown on c - and a -plane sapphire. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

[1]  R. Bertoncello,et al.  Chemical vapour deposition and characterization of gallium oxide thin films , 1996 .

[2]  Z. Li,et al.  Photocatalytic performance of α-, β-, and γ-Ga2O3 for the destruction of volatile aromatic pollutants in air , 2007 .

[3]  H. Meixner,et al.  Characterization and crystallite growth of semiconducting high-temperature-stable Ga2O3 thin films , 1992 .

[4]  Minghwei Hong,et al.  Optical properties of gallium oxide thin films , 2002 .

[5]  Epitaxial Growth of GaN on (1 0 0) β-Ga2O3 Substrates by Metalorganic Vapor Phase Epitaxy , 2005 .

[6]  Byoung-Chul Shin,et al.  Ga2O3 THIN FILM DEPOSITED BY ATOMIC LAYER DEPOSITION WITH HIGH PLASMA POWER , 2006 .

[7]  Shinji Nakagomi,et al.  Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors , 2007 .

[8]  H. Ohta,et al.  Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures , 2002 .

[9]  J. Kwo,et al.  Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states , 2000 .

[10]  H. Meixner,et al.  Effect of the sensor structure on the stability of Ga2O3 sensors for reducing gases , 1994 .

[11]  A. Kudo,et al.  Photocatalytic activities and photophysical properties of Ga2−xInxO3 solid solution , 1998 .

[12]  T. Araki,et al.  Growth of hexagonal GaN films on the nitridated β-Ga2O3 substrates using RF-MBE , 2007 .

[13]  Hideo Hosono,et al.  Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals , 1997 .

[14]  K. Shimamura,et al.  Molecular beam epitaxy of c-plane wurtzite GaN on nitridized a-plane β-Ga2O3 , 2006 .

[15]  Takayoshi Oshima,et al.  Ga2O3 Thin Film Growth on c-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors , 2007 .

[16]  Nam Ho Kim,et al.  Annealing effects on the properties of Ga2O3 thin films grown on sapphire by the metal organic chemical vapor deposition , 2004 .

[17]  Hideo Hosono,et al.  Deep-ultraviolet transparent conductive β-Ga2O3 thin films , 2000 .

[18]  S. Geller,et al.  Crystal Structure of β‐Ga2O3 , 1960 .

[19]  Takayoshi Oshima,et al.  Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3 Substrates , 2008 .

[20]  Kazuo Nakajima,et al.  Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal , 2007 .

[21]  Z. Hajnal,et al.  Role of oxygen vacancy defect states in the n-type conduction of β-Ga2O3 , 1999 .