Analysis and prospect of local variability of drain current in scaled MOSFETs by a new decomposition method

Causes of drain current local variability are analyzed by decomposing into current variability components. Besides VTH and Gm components, it is newly found that effects of “current onset” variability caused by channel potential fluctuations largely contribute to the current variability and that Gm component is relatively small in the saturation region. It is shown that both VTH and current onset components decreases with reducing channel dopants, indicating that intrinsic channel is very effective to reduce current variability.