论文信息 - A generalized tanh law MOSFET model and its applications to CMOS inverters

A generalized tanh law MOSFET model and its applications to CMOS inverters

A generalized tanh law model is proposed to simulate the current-voltage characteristics of both long-channel and short-channel MOS transistors. The proposed model is used to calculate the propagation delay, short-circuit power dissipation, and logic threshold voltage of CMOS inverters. The results obtained are in good agreement with those obtained using classical models. >

A.H.M. Shousha | M. Aboulwafa

[1] S. G. Chamberlain,et al. Analytic and iterative transit-time models for VLSI MOSFETs in strong inversion , 1990 .

[2] Hendrikus J. M. Veendrick,et al. Short-circuit dissipation of static CMOS circuitry and its impact on the design of buffer circuits , 1984 .

[3] A. R. Newton,et al. Alpha-power law MOSFET model and its applications to CMOS inverter delay and other formulas , 1990 .

[4] Takayasu Sakurai,et al. CMOS inverter delay and other formulas using alpha -power law MOS model , 1988, [1988] IEEE International Conference on Computer-Aided Design (ICCAD-89) Digest of Technical Papers.