论文信息 - Electrical characterization of wafer-scale epitaxial graphene and its RF applications

Electrical characterization of wafer-scale epitaxial graphene and its RF applications

High-performance graphene field-effect transistors are fabricated on two-inch graphene-on-SiC wafers. Epitaxial graphene was synthesized on SiC wafers by thermal annealing to form one to two layers of graphene. The graphene transistors possess high current density of > 1mA/µm, and a cutoff frequency of 170 GHz is achieved for graphene FETs with a gate length of 90 nm. These results unravel the great potential of graphene for future RF applications.

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