论文信息 - p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents - 字舞流文

p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents

O. Bierwagen | U. Mishra | J. Speck | J. R. Lang | E. Young | D. Browne | C. Hurni | C. Gallinat | B. McSkimming