Nitrogen solubility and induced defect complexes in epitaxial GaAs:N.

Thermodynamic calculation suggests that the formation of bulk GaN pins N chemical potential mu(N)< or =mu(max)(N), resulting in low equilibrium N solubility [N] in bulk GaAs:N. In epitaxial growth, however, a fully relaxed GaN phase cannot form prior to the spontaneous formation of a N-rich layer on the surface. First-principles total-energy calculations show that in the epitaxial regime one can increase mu(max)(N) considerably from equilibrium mu(max)(N) without triggering the spontaneous formation of such a N-rich layer. This enhances [N] by 8 orders of magnitude to about 4% at T = 650 degrees C in agreement with experiments. The dominant defects at high N concentration are qualitatively different from those at low [N].

[1]  Northrup,et al.  Structure of GaAs(001) surfaces: The role of electrostatic interactions. , 1994, Physical review. B, Condensed matter.

[2]  Su-Huai Wei,et al.  Nitrogen solubility and induced defect complexes in epitaxial GaAs:N. , 2001 .

[3]  Henryk Temkin,et al.  Growth of single phase GaAs1−xNx with high nitrogen concentration by metal–organic molecular beam epitaxy , 1997 .

[4]  T. Katsuyama,et al.  Metalorganic Vapor Phase Epitaxial Growth of GaNAs Using Tertiarybutylarsine (TBA) and Dimethylhydrazine (DMHy) , 1999 .

[5]  W. Harrison,et al.  Proceedings of the 17th International Conference on the Physics of Semiconductors , 1985 .

[6]  Wei,et al.  Giant and composition-dependent optical bowing coefficient in GaAsN alloys. , 1996, Physical review letters.

[7]  S. Sze.  Semiconductor Devices: Physics and Technology , 1985 .

[8]  Charles W. Tu,et al.  Bowing parameter of the band-gap energy of GaNxAs1−x , 1997 .

[9]  Zhang,et al.  Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion. , 1991, Physical review letters.

[10]  M. Weyers,et al.  Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3 , 1993 .

[11]  G. B. Stringfellow,et al.  Solubility of nitrogen in binary III–V systems , 1997 .

[12]  K. Uomi,et al.  Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy , 1996 .

[13]  Daniel J. Friedman,et al.  Photocurrent of 1 eV GaInNAs lattice-matched to GaAs , 1998 .

[14]  A. Zunger,et al.  Surface-reconstruction-enhanced solubility of N, P, As, and Sb in III-V semiconductors , 1997 .

[15]  I. Suemune,et al.  Metalorganic molecular beam epitaxy of GaNAs alloys on (0 0 1)GaAs , 1998 .