Physics of semiconductor power devices

Semiconductor power devices are designed to rapidly switch or amplify high currents, to support high voltages, and to control electric power. Because of these requirements, their topographies and structures are different from those of small-signal devices. Specific designs are the result of the understanding of the physics of p-n junction HV breakdown, gain variation at high currents, current instabilities, etc. After introducing elementary semiconductor structures, the author reviews the basic principles of the operation of bipolar and field-effect power transistors and thyristors. This is followed by a discussion of phenomena of special interest for power devices; junction avalanche breakdown, the effect of the current level on the current gain, dynamic and static behaviour at high currents and thermal properties and instabilities. The review includes recent advances in device physics and introduces the reader to new methods of improving device performance. Power is a relative concept-at microwave frequencies at few watts is a very large quantity; this review therefore includes a section on microwave power devices.

[1]  T. Ohmi,et al.  Punching through device and its integration—Static induction transistor , 1980, IEEE Transactions on Electron Devices.

[2]  H. F. Storm,et al.  An involute gate-emitter configuration for thyristors , 1974 .

[3]  J. G. Ruch,et al.  Electron dynamics in short channel field-effect transistors , 1972 .

[4]  E.S. Schlegel.  Gate-assisted turnoff thyristors , 1976, IEEE Transactions on Electron Devices.

[5]  R. Fair.  Optimum low-level injection efficiency of silicon transistors with shallow arsenic emitters , 1973 .

[6]  A. Marty,et al.  Design and fabrication of high-speed GaAlAs/GaAs heterojunction transistors , 1980, IEEE Transactions on Electron Devices.

[7]  T. Mamine,et al.  A high-power gate-controlled switch (GCS) using new lifetime control method , 1981, IEEE Transactions on Electron Devices.

[8]  A. Rusu,et al.  Reversible breakdown voltage collapse in silicon gate-controlled diodes , 1980 .

[9]  C. T. Kirk,et al.  A theory of transistor cutoff frequency (fT) falloff at high current densities , 1962, IRE Transactions on Electron Devices.

[10]  B. Ridley,et al.  Specific Negative Resistance in Solids , 1963 .

[11]  H. Herzer,et al.  Doping of Silicon by Neutron Irradiation , 1975 .

[12]  John L. Moll,et al.  Large-Signal Transient Response of Junction Transistors , 1954, Proceedings of the IRE.

[13]  Jun-ichi Nishizawa,et al.  High-frequency high-power static induction transistor , 1978 .

[14]  W. R. Wisseman,et al.  GaAs Power MESFET's: Design, Fabrication, and Performance , 1979 .

[15]  F. E. Gentry,et al.  Control of electric fields at the surface of p-n junctions , 1963 .

[16]  R. A. Kokosa,et al.  A high-voltage, high-temperature reverse conducting thyristor , 1970 .

[17]  M.S. Shur.  Analytical model of GaAs MESFET's , 1978, IEEE Transactions on Electron Devices.

[18]  F. Dannhauser,et al.  A quasi-stationary treatment of the turn-on delay phase of one-dimensional thyristors: Part I—Theory , 1976, IEEE Transactions on Electron Devices.

[19]  W. J. Chudobiak.  The saturation characteristics of n-p-ν-n power transistors , 1970 .

[20]  D. C. Agouridis,et al.  The cutoff frequency falloff in UHF transistors at high currents , 1966 .

[21]  R. L. Longini,et al.  Gated turn-on of four layer switch , 1963 .

[22]  M.S. Adler,et al.  A general method for predicting the avalanche breakdown voltage of negative bevelled devices , 1976, IEEE Transactions on Electron Devices.

[23]  Jozef Cornu,et al.  Processes at turn-on of thyristors , 1975 .

[24]  J. Burtscher,et al.  Die rekombination in thyristoren und gleichrichtern aus silizium: Ihr einfluss auf die durchlasskennlinie und das freiwerdezeitverhalten , 1975 .

[25]  B. J. Baliga,et al.  Vertical channel field-controlled thyristors with high gain and fast switching speeds , 1978, IEEE Transactions on Electron Devices.

[26]  Gerald D. Mahan,et al.  Energy gap in Si and Ge: Impurity dependence , 1980 .

[27]  Adolph Blicher.  Field-Effect and Bipolar Power Transistor Physics , 1981 .

[28]  M.S. Adler,et al.  The dynamics of the thyristor turn-on process , 1980, IEEE Transactions on Electron Devices.

[29]  A. Rusu,et al.  Deep-depletion breakdown voltage of silicon-dioxide/silicon MOS capacitors , 1979, IEEE Transactions on Electron Devices.

[30]  S. Krishna.  Second breakdown in high voltage MOS transistors , 1977 .

[31]  W.W. Sheng,et al.  The effect of Auger recombination on the emitter injection efficiency of bipolar transistors , 1975, IEEE Transactions on Electron Devices.

[32]  P. L. Hower.  Optimum design of power transistor switches , 1973 .

[33]  H. C. Poon,et al.  An integral charge control model of bipolar transistors , 1970, Bell Syst. Tech. J..

[34]  R. Amantea.  A new solution for minority-carrier injection into the emitter of a bipolar transistor , 1980, IEEE Transactions on Electron Devices.

[35]  J. Nishizawa,et al.  Field-effect transistor versus analog transistor (static induction transistor) , 1975, IEEE Transactions on Electron Devices.

[36]  W. Fulop,et al.  Calculation of avalanche breakdown voltages of silicon p-n junctions , 1967 .

[37]  P. L. Hower,et al.  Avalanche injection and second breakdown in transistors , 1970 .

[38]  V. Temple,et al.  The theory and application of a simple etch contour for near ideal breakdown voltage in plane and planar p-n junctions , 1976, IEEE Transactions on Electron Devices.

[39]  J.D. Plummer,et al.  Modeling of the on-resistance of LDMOS, VDMOS, and VMOS power transistors , 1980, IEEE Transactions on Electron Devices.

[40]  A. Herlet.  The forward characteristic of silicon power rectifiers at high current densities , 1968 .

[41]  C. A. Liechti,et al.  Microwave Field-Effect Transistors--1976 , 1976 .

[42]  D. Tremere,et al.  Current gain and cutoff frequency falloff at high currents , 1969 .

[43]  J. Cornu,et al.  Field distribution near the surface of beveled P-N junctions in high-voltage devices , 1973 .

[44]  W. M. Webster.  On the Variation of Junction-Transistor Current-Amplification Factor with Emitter Current , 1954, Proceedings of the IRE.

[45]  V. Temple,et al.  Limitations on injection efficiency in power devices , 1976, 1975 International Electron Devices Meeting.

[46]  M.S. Adler,et al.  Maximum surface and bulk electric fields at breakdown for planar and beveled devices , 1978, IEEE Transactions on Electron Devices.

[47]  M.S. Adler,et al.  Accurate calculations of the forward drop and power dissipation in thyristors , 1978, IEEE Transactions on Electron Devices.

[49]  S. H. Wemple,et al.  Control of gate—Drain avalanche in GaAs MESFET's , 1980, IEEE Transactions on Electron Devices.

[51]  P. L. Hower,et al.  Comparison of one- and two-dimensional models of transistor thermal instability , 1974 .

[52]  E. D. Wolley.  Gate turn-off in p-n-p-n devices , 1966 .

[53]  H. K. Gummel.  A charge control relation for bipolar transistors , 1970, Bell Syst. Tech. J..

[54]  Adolf Herlet,et al.  Forward characteristics of thyristors in the fired state , 1966 .

[55]  P.L. Hower,et al.  Application of a charge-control model to high-voltage power transistors , 1976, IEEE Transactions on Electron Devices.

[56]  H. Kodera,et al.  Optimum design of triode-like JFET's by two-dimensional computer simulation , 1977, IEEE Transactions on Electron Devices.

[57]  P. Hower,et al.  Emitter current-crowding in high-voltage transistors , 1978, IEEE Transactions on Electron Devices.

[58]  G. Gibbons,et al.  Effect of junction curvature on breakdown voltage in semiconductors , 1966 .

[59]  J. Ebers,et al.  Large-Signal Behavior of Junction Transistors , 1954, Proceedings of the IRE.

[60]  V. Temple,et al.  A substrate etch geometry for near ideal breakdown voltage in p-n junction devices , 1977, IEEE Transactions on Electron Devices.

[61]  Ravendra K. Gupta,et al.  Mechanism of operation of field-effect devices , 1980 .

[62]  J. R. Hauser,et al.  The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries , 1964 .

[63]  Y. Takayama,et al.  A high-power GaAs MESFET with an experimentally optimized pattern , 1980, IEEE Transactions on Electron Devices.

[64]  N. R. Howard,et al.  P+IN+ silicon diodes at high forward current densities , 1965 .

[65]  Jr. H.J. Ruhl.  Spreading velocity of the active area boundary in a thyristor , 1970 .

[66]  J. L. Moll,et al.  Multiplication in collector junctions of silicon n-p-n and p-n-p transistors , 1970 .

[67]  M. Otsuka.  The forward characteristics of thyristors , 1967 .

[68]  C. Salama,et al.  Nonplanar power field-effect transistors , 1978, IEEE Transactions on Electron Devices.

[69]  R. A. Kokosa.  The potential and carrier distributions of a p-n-p-n device in the ON state , 1967 .

[70]  N. H. Fletcher,et al.  Some Aspects of the Design of Power Transistors , 1955, Proceedings of the IRE.

[71]  E. D. Wolley,et al.  High-voltage planar p-n junctions , 1967 .

[72]  Masaru Nakagiri,et al.  Damage Introduced by Second Breakdown in N-Channel MOS Devices , 1977 .

[73]  Current Gain Mechanism in Arsenic Emitter Transistors , 1973 .

[74]  E. J. McGrath,et al.  Factors limiting current gain in power transistors , 1977, IEEE Transactions on Electron Devices.

[75]  W. H. Dodson,et al.  Probed determination of turn-on spread of large area thyristors , 1966 .

[76]  H. Kodera,et al.  Two-dimensional analysis of triode-like operation of junction gate FET's , 1975, IEEE Transactions on Electron Devices.

[77]  S. Krishna,et al.  Second Breakdown in Power Transistors Due to Avalanche Injection , 1976, IEEE Transactions on Industrial Electronics and Control Instrumentation.