论文信息 - High-speed sense amplifier for SRAM applications

High-speed sense amplifier for SRAM applications

A high-speed sense amplifier capable of static random access memory (SRAM) applications has been developed in this work. The proposed sense amplifier can work at 1GHz with voltage as low as 1.8 V. Restated, the proposed sense amplifier can be used in memory units, as a line receiver and as a restoring element for small-swing logic. Simulated results show that the proposed sense amplifier has 50/spl sim/87.5 % speed improvement compared to the conventional sense amplifiers.

Chun-Lung Hsu | Mean-Horn Ho

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