Direct visualization of electro-thermal filament formation in a Mott system

The high power consumption caused by Joule heating is one reason for the emergence of the research area of neuromorphic computing. However, Joule heating is not only detrimental. In a specific class of devices considered for emulating firing of neurons, the formation of an electro-thermal filament sustained by locally confined Joule heating accompanies resistive switching. Here, the resistive switching in a V2O3-thin-film device is visualized via high-resolution wide-field microscopy. Although the formation and destruction of electro-thermal filaments dominate the resistive switching, the strain-induced coupling of the structural and electronic degrees of freedom leads to various unexpected effects like oblique filaments, filament splitting, memory effect, and a hysteretic current-voltage relation with saw-tooth like jumps at high currents.

[1]  M. Rozenberg,et al.  Non-thermal resistive switching in Mott insulator nanowires , 2020, Nature Communications.

[2]  Juan Trastoy,et al.  Subthreshold firing in Mott nanodevices , 2019, Nature.

[3]  M. Lange A high resolution polarizing microscope for cryogenic imaging : development and application to investigations on twin walls in SrTiO 3 and the metal-insulator transition in V 2 O 3 , 2018 .

[4]  Ilya Valmianski,et al.  Origin of the current-driven breakdown in vanadium oxides: Thermal versus electronic , 2018, Physical Review B.

[5]  Juan Trastoy,et al.  Electrically Induced Multiple Metal-Insulator Transitions in Oxide Nanodevices , 2017 .

[6]  D. Koelle,et al.  A high-resolution combined scanning laser and widefield polarizing microscope for imaging at temperatures from 4 K to 300 K. , 2017, The Review of scientific instruments.

[7]  Nikita A. Butakov,et al.  Switchable Plasmonic–Dielectric Resonators with Metal–Insulator Transitions , 2017 .

[8]  Marcin Sikorski,et al.  Nonequilibrium Phase Precursors during a Photoexcited Insulator-to-Metal Transition in V_{2}O_{3}. , 2017, Physical review letters.

[9]  H. Okamoto,et al.  Mott transition by an impulsive dielectric breakdown. , 2017, Nature materials.

[10]  M. Rozenberg,et al.  A Leaky‐Integrate‐and‐Fire Neuron Analog Realized with a Mott Insulator , 2017 .

[11]  Ivan K. Schuller,et al.  Nanotextured phase coexistence in the correlated insulator V2O3 , 2016, Nature Physics.

[12]  M. Fabrizio,et al.  Field-Driven Mott Gap Collapse and Resistive Switch in Correlated Insulators. , 2016, Physical review letters.

[13]  Benoit Corraze,et al.  Resistive Switching in Mott Insulators and Correlated Systems , 2015 .

[14]  Richard F. Haglund,et al.  Optically Monitored Electrical Switching in VO2 , 2015 .

[15]  Charles T Rettner,et al.  Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide. , 2014, Nature nanotechnology.

[16]  Woo-ram Lee,et al.  Dielectric Breakdown via Emergent Nonequilibrium Steady States of the Electric-field-driven Mott Insulator , 2013 .

[17]  M. Pickett,et al.  A scalable neuristor built with Mott memristors. , 2013, Nature materials.

[18]  Ivan K. Schuller,et al.  Electrical breakdown in a V2O3 device at the insulator-to-metal transition , 2012, 1210.6648.

[19]  Siming Wang,et al.  Insulator-to-metal transition and correlated metallic state of V 2 O 3 investigated by optical spectroscopy , 2012 .

[20]  S. Ramanathan,et al.  Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions , 2011 .

[21]  M. Rozenberg,et al.  Nonequilibrium electronic transport in a one-dimensional Mott insulator , 2010, 1008.0101.

[22]  T. Oka,et al.  Dielectric breakdown of Mott insulators in dynamical mean-field theory. , 2010, Physical review letters.

[23]  Naoto Nagaosa,et al.  Field-induced metal-insulator transition and switching phenomenon in correlated insulators , 2007, 0712.1390.

[24]  A. N. Rubtsov,et al.  Enhanced crystal-field splitting and orbital-selective coherence induced by strong correlations in V 2 O 3 , 2007, cond-mat/0701263.

[25]  T. Oka,et al.  Ground-state decay rate for the Zener breakdown in band and Mott insulators. , 2005, Physical review letters.

[26]  A. Georges,et al.  Universality and Critical Behavior at the Mott Transition , 2003, Science.

[27]  T. M. Rice,et al.  Metal‐Insulator Transitions , 2003 .

[28]  R. Arita,et al.  Breakdown of a Mott insulator: a nonadiabatic tunneling mechanism. , 2003, Physical review letters.

[29]  K. Held,et al.  Prominent quasiparticle peak in the photoemission spectrum of the metallic phase of V2O3. , 2002, Physical review letters.

[30]  Y. Tokura,et al.  Dielectric Breakdown of the Insulating Charge-Ordered State in La 2-x Sr x NiO 4 , 1999 .

[31]  Tokura,et al.  Current-induced insulator-metal transition and pattern formation in an organic charge-transfer complex , 1999, Science.

[32]  Aleksandr V. Gurevich,et al.  Self-heating in normal metals and superconductors , 1987 .

[33]  J. Duchene,et al.  Filamentary Conduction in VO2 Coplanar Thin‐Film Devices , 1971 .

[34]  J. P. Remeika,et al.  Metal-Insulator Transition in(V1−xCrx)2O3 , 1970 .