Charge transfer and low‐temperature electron mobility in a strained Si layer in relaxed Si1−xGex

Calculated results for charge transfer and low‐temperature electron mobility in strained silicon grown epitaxially on relaxed Si1−xGex are presented versus the thickness of an undoped spacer layer and other structural and materials parameters. The indicated conduction band offset for Si on relaxed Si0.7Ge0.3 is 180±15 meV. Scattering by the remote doping impurities that supply the carriers is found to be the dominant scattering mechanism in high‐mobility samples. Samples with enhanced interface scattering are expected to have a stronger temperature dependence of mobility.

[1]  F. Stern.  Doping considerations for heterojunctions , 1983 .

[2]  Frank Stern,et al.  Calculated Temperature Dependence of Mobility in Silicon Inversion Layers , 1980 .

[3]  Coleridge Pt,et al.  Small-angle scattering in two-dimensional electron gases. , 1991 .

[4]  E. Mendez,et al.  Observation of the fractional quantum Hall effect in Si/SiGe heterostructures , 1992 .

[5]  Steven E. Laux,et al.  Electron states in narrow gate-induced channels in Si , 1986 .

[6]  Gerhard Abstreiter,et al.  High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer , 1992 .

[7]  Gold.  Electronic transport properties of a two-dimensional electron gas in a silicon quantum-well structure at low temperature. , 1987, Physical review. B, Condensed matter.

[8]  Gold.  Peak mobility of silicon metal-oxide-semiconductor systems. , 1985, Physical review letters.

[9]  Bernard S. Meyerson,et al.  High electron mobility in modulation‐doped Si/SiGe , 1991 .

[10]  Tromp,et al.  Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111). , 1991, Physical review. B, Condensed matter.

[11]  Don Monroe,et al.  Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy , 1991 .

[12]  F. Stern,et al.  Electronic properties of two-dimensional systems , 1982 .

[13]  Efros,et al.  Maximum low-temperature mobility of two-dimensional electrons in heterojunctions with a thick spacer layer. , 1990, Physical review. B, Condensed matter.

[14]  Wolf,et al.  Strain-induced two-dimensional electron gas in selectively doped Si/SixGe1-x superlattices. , 1985, Physical review letters.

[15]  S. C. Jain,et al.  Structure, properties and applications of GexSi1-x strained layers and superlattices , 1991 .

[16]  Kawamura,et al.  Phonon-scattering-limited electron mobilities in AlxGa1-xAs/GaAs heterojunctions. , 1992, Physical review. B, Condensed matter.