论文信息 - Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance - 字舞流文

Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance

S. Decoutere | I. De Wolf | R. Mertens | H. Oprins | G. Borghs | M. Leys | J. Das | M. Van Hove | D. Visalli | P. Srivastava | D. Marcon | K. Cheng | K. Geens | B. Bakeroot | X. Kang | S. Lenci | P. Malinowski | J. Viaene