论文信息 - Improved GeOI substrates for pMOSFET off-state leakage control

Improved GeOI substrates for pMOSFET off-state leakage control

The origin of parasitic leakage that occurs in some GeOI pMOSFETs has been investigated and located at the Ge-buried oxide (BOX) interface. Silicon passivation of that interface was found to be effective in reducing this current. An optimum thickness of the buried silicon capping is required to reduce the parasitic leakage current while preserving Ge-like back channel transport properties.

[1] Y. Bogumilowicz,et al. Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(0 0 1) for microelectronics and optoelectronics purposes , 2005 .

[2] A. Dimoulas,et al. Modeling of negatively charged states at the Ge surface and interfaces , 2009 .

[3] Paul Zimmerman,et al. Thin epitaxial si films as a passivation method for Ge(100) : Influence of deposition temperature on ge surface segregation and the high-k/Ge interface quality , 2006 .

[4] H. Grampeix,et al. Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1); Ge surface passivation by Si , 2008, ECS Transactions.

[5] G. Groeseneken,et al. Temperature dependence of threshold voltage in thin-film SOI MOSFETs , 1990, IEEE Electron Device Letters.

[6] M. Meuris,et al. High Mobility Strained Ge pMOSFETs With High-$\kappa$ /Metal Gate , 2007, IEEE Electron Device Letters.