1.55 mu m DFB lasers with Fe-doped InP current blocking layers grown by two-step MOVPE

High-speed 1.55 μm DFB lasers with Fe-doped InP current blocking layers are reported. The lasers were fabricated on corrugated p-InP substrates by two-step MOVPE for the first time. A threshold current of 30 mA and a differential quantum efficiency of 38% were obtained. Parasitic capacitance as low as 4 pF was achieved without any complicated processes.