论文信息 - Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

Surface segregation of In atoms during molecular beam epitaxy (MBE) and its influence on the energy levels in InGaAs/GaAs quantum wells (QWs) were systematically studied using secondary‐ion mass spectroscopy (SIMS) and photoluminescence (PL). Strong dependence of In surface segregation on the growth conditions was found; when the growth temperature was raised from 370 to 520 °C, the segregation length was observed to increase from 0.8 up to 2.9 nm, accompanied by an appreciable peak energy shift in the PL spectra of the InGaAs/GaAs QWs. The correlation between In surface segregation and the energy levels in InGaAs/GaAs QWs was clarified for the first time.

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