论文信息 - 45‐3: Invited Paper: Enabling the Next Era of Display Technologies by Micro LED MOCVD Processing - 字舞流文

45‐3: Invited Paper: Enabling the Next Era of Display Technologies by Micro LED MOCVD Processing

Michael Heuken | Arthur Beckers | Thomas Kruecken | M. Heuken | Adam R. Boyd | C. Mauder | C. Mauder | Dirk Fahle | D. Fahle | A. Boyd | T. Kruecken | A. Beckers

[1] M. Heuken. (Invited) MOCVD of III-V Compounds on Silicon Substrate-Status and Challenges , 2014 .

[2] C. N. Berglund,et al. A unified yield model incorporating both defect and parametric effects , 1996 .

[3] Michael Heuken,et al. Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors , 2007 .

[4] M. Meitl,et al. 55‐1: Invited Paper: Passive Matrix Displays with Transfer‐Printed Microscale Inorganic LEDs , 2016 .

[5] Martin Dauelsberg,et al. Investigation of nitride MOVPE at high pressure and high growth rates in large production reactors by a combined modelling and experimental approach , 2011 .

[6] M. Charles,et al. 19-6: Invited Paper: A Novel Process for Fabricating High-Resolution and Very Small Pixel-pitch GaN LED Microdisplays , 2017 .

[7] B. T. Murphy,et al. Cost-size optima of monolithic integrated circuits , 1964 .

[8] Hongxing Jiang,et al. III-Nitride full-scale high-resolution microdisplays , 2011 .